A two-dimensional resistance simulator using the boundary element method
نویسندگان
چکیده
A new resistance simulator for extraction of the parasitic parameters from VLSI layout is presented. The calculation of resistor network is based on the boundary element method (BEM). The computational results indicate that the BEM has an advantage over the finite difference method (FDM) and the finite element method (FEM). Since only discretized equations on the boundary of solved domain need to be solved, the grid number on the boundary is much smaller and mesh generation is greatly simplified. Hence the execution CPU time is reduced drastically. Besides, the BEM is powerful in dealing with complicated boundary geometry in the resistance computation. In order to treat the corners on the boundary, the concept of multiple normal derivatives at a corner is proposed. The concept is used in both continuous and partially discontinuous linear elements to increase the accuracy and reduce the number of unknowns. It is important that this concept can he generalized to higher order elements and to more complicated corners. It is also shown that a nonuniform mesh scheme is significant for the problems with some stronger singularities.
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ورودعنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 11 شماره
صفحات -
تاریخ انتشار 1992